Cleaning of extreme ultraviolet lithography optics and masks using 13.5 nm and 172 nm radiation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 247-251

  Hamamoto, K ^a,b   Tanaka, Y ^a,b   Watanabe, T ^a,b   Sakaya, N ^b,c   Hosoya, M ^b,c   Shoki, T ^b,c   Hada, H ^d   Hishinuma, N ^e   Sugahara, H ^e   Kinoshita, H ^a,b  

^a UNIVERSITY OF HYOGO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c HOYA CORPORATION   (Japan)

^d TOKYO OHKA KOGYO CO LTD   (Japan)

^e USHIO INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EUV LITHOGRAPHY; IMAGING OPTICS;

CARBON; CLEANING; CONTAMINATION; ELECTRON BEAMS; LITHOGRAPHY; MOLYBDENUM COMPOUNDS; OPTICS; ORGANIC COMPOUNDS; SYNCHROTRON RADIATION;

ULTRAVIOLET RADIATION;

EID: 31144448394     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1849220     Document Type: Article

References (6)

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