Effect of NH3 /He plasma treatment on electrical reliability and early-stage electromigration behavior of copper interconnects

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Chang, Shou Yi ^a   Lin, Fong Jie ^a   Lin, Chia Feng ^a   Hsu, Hsun Feng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; COPPER INTERCONNECTS; CU ATOMS; CU INTERCONNECT; CU SURFACES; CUMULATIVE FAILURE; DIFFUSION PATHS; DUAL DAMASCENE; ELECTRICAL RELIABILITY; ELECTROMIGRATION BEHAVIOR; ELECTROMIGRATION RELIABILITY; ELECTROMIGRATION RESISTANCE; HIGH CURRENT DENSITIES; INTERFACE ADHESION; INTERFACE STRUCTURES; MEDIAN TIME TO FAILURES; OXIDE LAYER; PLASMA TREATMENT; SHAPE FACTOR;

ELECTROMIGRATION; HELIUM; OPTICAL INTERCONNECTS; PLASMA APPLICATIONS; PLASMAS; RELIABILITY; SURFACE DIFFUSION; WIRE;

PLASMA DIAGNOSTICS;

EID: 68049137220     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3155404     Document Type: Article

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