Electromigration-induced void growth kinetics in SiNx-passivated single-damascene Cu lines

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 5990-5996

  Yokogawa, Shinji ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Critical product; Damascene; Drift velocity; Effective incubation time; Electromigration

Indexed keywords

ACTIVATION ENERGY; APPROXIMATION THEORY; COPPER; CURRENT DENSITY; DIFFUSION; ELECTROMIGRATION; GROWTH KINETICS; PASSIVATION;

CRITICAL PRODUCT; DAMASCENE; DRIFT VELOCITY; EFFECTIVE INCUBATION TIME;

SILICON NITRIDE;

EID: 9144236587     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5990     Document Type: Article

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