Electromigration Cu mass flow in Cu interconnections

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 274-278

  Hu, C K ^a   Canaperi, D ^a   Chen, S T ^b   Gignac, L M ^a   Kaldor, S ^b   Krishnan, M ^a   Malhotra, S G ^b   Liniger, E ^a   Lloyd, J R ^a   Rath, D L ^a   Restaino, D ^b   Rosenberg, R ^a   Rubino, J ^a   Seo, S C ^a   Simon, A ^b   Smith, S ^a   Tseng, W T ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Activation energy; Diffusion; Electromigration; Interface

Indexed keywords

ACTIVATION ENERGY; COPPER; ELECTRODES; INTERFACES (MATERIALS); PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; THIN FILMS;

BAMBOO-LIKE CU LINES; CU DAMASCENE LINES; MASS FLOW;

ELECTROMIGRATION;

EID: 33644928297     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.161     Document Type: Conference Paper

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