Stress migration and electromigration improvement for copper dual damascene interconnection

Journal of the Electrochemical Society

Volumn 152, Issue 1, 2005, Pages

  Wang, T C ^a   Hsieh, T E ^a   Wang, Ming Tsong ^b,c   Su, Di Shi ^b   Chang, Ching Hung ^b   Wang, Y L ^a,b   Lee, Joseph Ya Min ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CONTAMINATION; COPPER; GRAIN GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS; STRESS ANALYSIS; VACUUM;

DUAL DAMASCENE INTERCONNECTION; SHALLOW TRENCH ISOLATION (STI); STRESS MIGRATION; TESTING STRUCTURES;

ELECTROMIGRATION;

EID: 12744278069     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1828419     Document Type: Article

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