Linear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer

Physica B: Condensed Matter

Volumn 337, Issue 1-4, 2003, Pages 388-393

  Akkilic K ^a   Kilicoglu T ^b   Turut A ^c  

^a DICLE UNIVERSITY   (Turkey)

^b Faculty of Science and Art   (Turkey)

^c ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; Metal semiconductor contact; Schottky barrier; The interfacial layer

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); SILICON WAFERS; TIN;

IDEALITY FACTORS;

SCHOTTKY BARRIER DIODES;

EID: 0041826783     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(03)00431-9     Document Type: Article

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