The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 14, 2009, Pages 2395-2398

  Li, B S ^a   Zhang, C H ^a   Zhong, Y R ^b   Wang, D N ^b   Zhou, L H ^a   Yang, Y T ^a   Zhang, H H ^a   Zhang, L Q ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Annealing; Doppler broadening; Ion implantation; Silicon; Vacancy type defects

Indexed keywords

ANNEALING TEMPERATURES; ARGON ATOMS; DAMAGED LAYERS; DOPPLER BROADENING; DOPPLER BROADENING SPECTRA; OPEN-VOLUME DEFECTS; POSITRON BEAMS; ROOM TEMPERATURE; S PARAMETERS; SAMPLE SURFACE; VACANCY-TYPE DEFECTS;

ANNEALING; ARGON; DEFECTS; DOPPLER EFFECT; ION BOMBARDMENT; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

VACANCIES;

EID: 67649586908     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.004     Document Type: Article

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