Buried oxide and defects in oxygen implanted Si monitored by positron annihilation

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1179-1187

  Kruseman, A C ^a,c   Van Veen, A ^a   Schut, H ^a   Mijnarends, P E ^a   Fujinami, M ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF TOKYO   (Japan)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035425010     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380411     Document Type: Article

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