High-dose helium-implanted single-crystal silicon: Annealing behavior

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 4802-4808

  Tonini, R ^a   Corni, F ^a   Frabboni, S ^a   Ottaviani, G ^a   Cerofolini, G F ^b  

^a INFM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001482128     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368803     Document Type: Article

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