Mechanisms of void coarsening in helium implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 196, Issue 1-2, 2002, Pages 125-134

  Evans, J H ^a  

^a Camrose Consultants   (United Kingdom)

Author keywords

Helium; Silicon; Voids

Indexed keywords

ANNEALING; COALESCENCE; HELIUM; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

COARSENING;

ION IMPLANTATION;

EID: 0036842047     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01290-9     Document Type: Article

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