Buried silicon dioxide formation in a precursor nanocavity layer in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 264-268

  Van Veen, A ^a   Rivera, A ^a   Schut, H ^a   Van Gog, H ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Annihilation; Oxygen diffusion; Positrons; Silicon dioxide

Indexed keywords

ANNEALING; DIFFUSION; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH (MATERIALS); INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; PARTIAL PRESSURE; POSITRON ANNIHILATION SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SCATTERING PARAMETERS; SILICA; THERMAL EFFECTS;

ANNIHILATION; NANOCAVITIES; OXYGEN DIFFUSION;

SILICON;

EID: 1042263846     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.044     Document Type: Conference Paper

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