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Volumn 38, Issue 2 A, 1999, Pages 613-617

Desorption kinetics of Ar implanted into Si

Author keywords

Activation energy; Ar implanted into Si; Desorption; Kinetics; Structural transformation; TDS

Indexed keywords


EID: 4243618985     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.613     Document Type: Article
Times cited : (5)

References (16)
  • 9
    • 33644670859 scopus 로고    scopus 로고
    • note
    • A recoil was assumed to be generated if the ions or another recoil transferred energy larger than the displacement energy of 25 eV to targetatoms. A vacancy was produced at the original position of the recoiled target atom whereas an interstitial was generated at the point where the recoil came to rest.
  • 14
    • 0003779355 scopus 로고
    • John-Wilcy & Sons, New York, 3rd ed.
    • W. W. Wendlandt: Thermal Analysis (John-Wilcy & Sons, New York, 1985) 3rd ed., p. 69.
    • (1985) Thermal Analysis , pp. 69
    • Wendlandt, W.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.