Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing

Applied Surface Science

Volumn 253, Issue 16, 2007, Pages 6868-6871

  Hao, X P ^a,b   Yu, R S ^a   Wang, B Y ^a   Chen, H L ^c   Wang, D N ^a   Ma, C X ^a   Wei, L ^a  

^a INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Nitrogen ion implantation; Rapid thermal processing; Slow positron beam

Indexed keywords

DOPPLER EFFECT; ION IMPLANTATION; POSITRON ANNIHILATION; RAPID THERMAL PROCESSING; SCATTERING PARAMETERS;

DOPPLER BROADENING MEASUREMENTS; NITROGEN IMPLANTATION; NITROGEN ION IMPLANTATION; SLOW POSITRON BEAM;

SILICON WAFERS;

EID: 34248384459     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.01.125     Document Type: Article

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