Damage production in silicon irradiated with 112 MeV Ar ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 219-223

  Liu, Changlong ^a   Hou, Mingdong ^a   Zhu, Zhiyong ^a   Wang, Zhiguang ^a   Cheng, Song ^a   Jin, Yunfan ^a   Sun, Youmei ^a   Li, Changlin ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

Author keywords

Amorphous region; Divacancy; Irradiation; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTALLIZATION; INFRARED SPECTROSCOPY; ION BOMBARDMENT; PARAMAGNETIC RESONANCE; POINT DEFECTS; RADIATION DAMAGE;

VACANCIES;

SEMICONDUCTING SILICON;

EID: 0032472709     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00593-4     Document Type: Article

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