Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Applied Physics Letters

Volumn 86, Issue 24, 2005, Pages 1-3

  Simpson, Todd W ^a   Mitchell, Ian V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUBBLE FORMATION; HELIUM; ION IMPLANTATION; NUCLEATION; SCANNING ELECTRON MICROSCOPY;

CAVITY STRUCTURES; EXFOLIATION; HELIUM BUBBLE NUCLEATION; ION ENERGY;

SILICON;

EID: 21344438126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1947384     Document Type: Article

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