High permittivity SrHf0.5 Ti0.5 O3 films grown by pulsed laser deposition

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Yan, L ^a   Suchomel, M R ^a   Grygiel, C ^a   Niu, H J ^a   McMitchell, S R C ^a   Bacsa, J ^a   Clark, J H ^a   Werner, M ^a   Chalker, P R ^a   Rosseinsky, M J ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; ATOMICALLY SMOOTH SURFACE; BAND GAPS; C-AXIS ORIENTATIONS; CONDUCTING SUBSTRATES; ENHANCED BAND; HIGH PERMITTIVITY; HIGH-K DIELECTRIC; ROOT MEAN SQUARE ROUGHNESS; SILICON-BASED INTEGRATED CIRCUITS;

CONDUCTIVE FILMS; ELECTRIC FIELDS; ENERGY GAP; INTEGRATED CIRCUITS; NIOBIUM; PERMITTIVITY; PULSED LASER DEPOSITION; SINGLE CRYSTALS; SUBSTRATES;

OZONE WATER TREATMENT;

EID: 67649105604     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3151815     Document Type: Article

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