Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 526-530

  Jeong, S W ^a   Lee, H J ^a   Kim, K S ^a   You, M T ^a   Roh, Y ^a   Noguchi, T ^b   Xianyu, W ^b   Jung, J ^b  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

ALD; HfO2; High k oxide; MIM capacitor

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MIM DEVICES; PERMITTIVITY;

ATOMIC LAYER DEPOSITION (ALD); HFO2; HIGH-K OXIDE; RAPID THERMAL PROCESSOR (RTP);

HAFNIUM COMPOUNDS;

EID: 33748747482     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.288     Document Type: Article

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