SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 434-436

ALD growth, thermal treatments and characterisation of Al2O3 layers

(5) Ghiraldelli, E a Pelosi, C a Gombia, E a Chiavarotti, G b Vanzetti, L c

a IMEM CNR (Italy)

b OIDA SaS R and D (Italy)

c ITC IRST (Italy)

Author keywords

Al2O3; ALD growth; C V measurements; High K dielectrics; Thermal treatment; XPS analysis

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC PROPERTIES; HEAT TREATMENT; PULSED LASER DEPOSITION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THERMAL SPRAYING;

AL2O3; ALD GROWTH; C-V MEASUREMENTS; HIGH K DIELECTRICS; THERMAL TREATMENT; XPS ANALYSIS;

ATOMIC LAYER DEPOSITION;

EID: 54849415654 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2008.08.052 Document Type: Article

Times cited : (28)

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