Temperature dependence of current-voltage characteristics of the Pd/InP Schottky contacts

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 12, 2007, Pages 3877-3880

  Ashok Kumar, A ^a   Janardhanam, V ^a   Rajagopal Reddy, V ^a   Narasimha Reddy, P ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Current voltage characteristics; Indium Phosphide (InP); Schottky contacts

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; THERMIONIC EMISSION;

INCREASING TEMPERATURES; INTERFACE POTENTIALS; RICHARDSON CONSTANT; SCHOTTKY CONTACTS; SPATIAL IN-HOMOGENEITY; STRONG DEPENDENCES; TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE DEPENDENT;

TEMPERATURE DISTRIBUTION;

EID: 38549109771     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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