Temperature dependent capacitance and DLTS studies of Ni/n-type 6H-SiC Schottky diode

Current Applied Physics

Volumn 9, Issue 6, 2009, Pages 1181-1185

  Duman, Songül ^a   Gür, Emre ^a   Doǧan, Seydi ^a   Tüzemen, Sebahattin ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier height; Deep level transient spectroscopy (DLTS); Electrical properties and characterization; Schottky diodes; Silicon carbide

Indexed keywords

BARRIER HEIGHT; BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE-VOLTAGE TECHNIQUES; DEEP LEVEL; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DLTS; ELECTRICAL PROPERTIES AND CHARACTERIZATION; FOUR ELECTRONS; INTRINSIC NATURE; SCHOTTKY DIODES; SIC SCHOTTKY DIODE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIODES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SPECTRUM ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349086259     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.01.009     Document Type: Article

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