Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3233-3238

  Nakakura, Y ^a   Kato, M ^a   Ichimura, M ^a   Arai, E ^a   Tokuda, Y ^b   Nishino, S ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; EPITAXIAL GROWTH; IONIZATION;

OPTICAL CROSS SECTIONS;

SILICON CARBIDE;

EID: 0141608030     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600528     Document Type: Article

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