Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2

Physical Review Letters

Volumn 92, Issue 12, 2004, Pages

  Chen, X D ^a   Yang, C L ^b   Gong, M ^c   Ge, W K ^b   Fung, S ^a   Beling, C D ^a   Wang, J N ^b   Lui, M K ^a   Ling, C C ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c SICHUAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; ENERGY TRANSFER; HIGH TEMPERATURE EFFECTS; IONIZATION; MONOCHROMATORS; PHOTOLUMINESCENCE;

CARBON VACANCY; DEEP LEVEL DEFECTS; ISOCHRONAL THERMAL ANNEALING; SUBLATTICES;

SILICON CARBIDE;

EID: 2442447104     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.125504     Document Type: Article

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