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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 695-697

Influence of annealing temperature upon deep levels in 6 H SiC

(3) Perjeru, F a Woodin, R L b Kordesch, M E a

a OHIO UNIVERSITY (United States)

b Extreme Devices Inc (United States)

Author keywords

Defects; DLTS; SiC

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; SCHOTTKY BARRIER DIODES; SILICON WAFERS; THERMAL EFFECTS;

ANNEALING TEMPERATURES;

SILICON CARBIDE;

EID: 0035675727 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00871-7 Document Type: Article

Times cited : (2)

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