Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 273-276

  Sghaier, N ^a   Souifi, A K ^a   Bluet, J M ^a   Guillot, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

RANDOM TELEGRAPH SIGNAL; THERMOIONIC EMISSION THEORY;

SILICON CARBIDE;

EID: 0035300175     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011223823286     Document Type: Article

References (10)