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Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 456-459

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

(5) Fang, Z Q a Look, D C a Chandrasekaran, R b Rao, S b Saddow, S E b

a WRIGHT STATE UNIVERSITY (United States)

b UNIVERSITY OF SOUTH FLORIDA (United States)

Author keywords

Electrical characterizations; Electron traps; Epitaxial 6h sic; Porous SiC

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CORRELATION METHODS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TRAPS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; POROUS MATERIALS; SCHOTTKY BARRIER DIODES;

ELECTRICAL CHARACTERIZATIONS; EPITAXIAL 6H-SIC; POROUS SIC;

SILICON CARBIDE;

EID: 2442696901 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-004-0202-y Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.