Investigation of defect levels in 6H-SiC single crystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 2967-2971

  Kaminski P ^a   Kozlowski R ^a   Kozubal, M ^a   Miczuga, M ^b   Palczewska, M ^a   Pawlowski M G ^a   Pawlowski M ^a,b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT LEVELS; EXTENDED DEFECTS; INTERNATIONAL CONFERENCES; PHOTO-INDUCED; TRANSIENT SPECTROSCOPY;

CRYSTALLOGRAPHY; CRYSTALS; DEFECTS; ELECTRIC CONDUCTIVITY; EXPLOSIVE ACTUATED DEVICES; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SINGLE CRYSTALS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 49549095573     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675471     Document Type: Conference Paper

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