Effects of electron irradiation on deep centers in high-purity semi-insulating 6H-SiC

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 307-311

  Fang, Z Q ^a,b   Claflin, B ^a,b   Look, D C ^a,b   Farlow, G C ^a  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Conductive and high purity semi insulating (HPSI) 6H SiC; Deep centers; Deep level transient spectroscopy (DLTS); Electron irradiation (EI); Thermally stimulated current (TSC) spectroscopy

Indexed keywords

CONDUCTIVE AND HIGH-PURITY/SEMI- INSULATING (HPSI) 6H-SIC; DEEP CENTERS; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); THERMALLY STIMULATED CURRENT (TSC) SPECTROSCOPY;

ELECTRIC CURRENTS; ELECTRON IRRADIATION; ELECTRON TRAPS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

THERMAL INSULATING MATERIALS;

EID: 34249096570     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0031-2     Document Type: Conference Paper

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