Comment on "Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC" [J. Appl. Phys. 79, 301 (1996)]

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6570-6571

  Frojdh C ^a   Petersson, C S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345650481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363643     Document Type: Review

References (6)

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6. L. C. Kimerling, J. Appl. Phys. 45, 1839 (1974).