Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 730-733

  Irmscher, K ^a   Pintilie, I ^b   Pintilie, L ^b   Schulz, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

6H SiC; DLTS; EPR; Tantalum; Tungsten

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; PARAMAGNETIC RESONANCE; SINGLE CRYSTALS; SUBLIMATION; TANTALUM;

DOUBLE DONORS; PHYSICAL VAPOR TRANSPORT (PVT);

SILICON CARBIDE;

EID: 0035678497     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00887-0     Document Type: Article

References (10)