Electrical and optical characterisation of vanadium in 4H and 6H-SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 248-252

  Lauer, V ^a   Bremond G ^a   Souifi, A ^a   Guillot, G ^a   Chourou, K ^b   Anikin, M ^b   Madar, R ^b   Clerjaud, B ^c   Naud, C ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

Electrical characterisation; Optical characterisation; Silicon carbide; Vanadium

Indexed keywords

BAND STRUCTURE; CORRELATION METHODS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON RESONANCE; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; GROUND STATE; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; VANADIUM;

DEEP LEVEL OPTICAL SPECTROSCOPY (DLOS);

SILICON CARBIDE;

EID: 0032679269     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00512-1     Document Type: Article

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