Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

Journal of Applied Physics

Volumn 79, Issue 1, 1996, Pages 301-304

  Smith, S R ^a,b   Evwaraye, A O ^b   Mitchel, W C ^b  

^a UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042739274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360944     Document Type: Article

References (22)

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