Source/drain engineering for parasitic resistance reduction for germanium p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2750-2755

  Chao, Yu Lin ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Copper germanide; Germanium; MOSFET; Parasitic resistance; Preamorphization implantation (PAI)

Indexed keywords

CONTACT RESISTANCE; EPITAXIAL GROWTH; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; VACANCIES;

COPPER GERMANIDE; PARASITIC RESISTANCE; PREAMORPHIZATION IMPLANTATION;

MOSFET DEVICES;

EID: 35148828010     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904576     Document Type: Article

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