Negative-tone molecular resists based on cationic polymerization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Lawson, Richard A ^a   Tolbert, Laren M ^b   Younkin, Todd R ^c   Hendersona, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Cationic polymerization; Chemically amplified photoresist; E beam lithography; Epoxide resist; High resolution lithography; Line edge roughness; Molecular resist

Indexed keywords

CHEMICALLY AMPLIFIED PHOTORESIST; E-BEAM LITHOGRAPHY; EPOXIDE RESIST; HIGH RESOLUTION LITHOGRAPHY; LINE EDGE ROUGHNESS; MOLECULAR RESIST;

CATIONIC POLYMERIZATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; PHOTORESISTORS; PHOTORESISTS; POLYMERS; SURFACE TREATMENT;

ROUGHNESS MEASUREMENT;

EID: 65849165230     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814455     Document Type: Conference Paper

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