Epoxide functionalized molecular resists for high resolution electron-beam lithography

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 959-962

  Lawson, Richard A ^a   Lee, Cheng Tsung ^a   Yueh, Wang ^b   Tolbert, Laren ^c   Henderson, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

^b INTEL CORPORATION   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

E beam lithography; Epoxide; High resolution lithography; Line edge roughness; Molecular resist

Indexed keywords

DIFFUSION; ELECTRON BEAM LITHOGRAPHY; EPOXIDATION; POLYMERIZATION; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS;

EPOXIDES; HIGH RESOLUTION LITHOGRAPHY; LINE EDGE ROUGHNESS; MOLECULAR RESISTS;

PHOTORESISTS;

EID: 44149092902     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.080     Document Type: Article

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