Electron beam lithography patterning of sub- 10 nm line using hydrogen silsesquioxane for nanoscale device applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 3120-3123

  Baek, In Bok ^a   Yang, Jong Heon ^a   Cho, Won Ju ^b   Ahn, Chang Geun ^a   Im, Kiju ^a   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; ORGANIC COMPOUNDS; TRIMMING; WIRE;

ELECTRON BEAM RESISTS; HYDROGEN SILSESQUIOXANE (HSQ); NANOSCALE PATTERNS; PATTERNING TECHNIQUES;

ELECTRON BEAM LITHOGRAPHY;

EID: 29044442587     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2132328     Document Type: Article

References (8)

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