High resolution negative tone molecular resist based on di-functional epoxide polymerization

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 734-737

  Lawson, Richard A ^a   Lee, Cheng Tsung ^a   Tolbert, Laren M ^b   Younkin, Todd R ^c   Henderson, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Cationic polymerization; E beam lithography; Epoxide; Extreme ultraviolet lithography; High resolution lithography; Line edge roughness; Molecular resists

Indexed keywords

E-BEAM LITHOGRAPHY; EPOXIDE; HIGH RESOLUTION LITHOGRAPHY; LINE EDGE ROUGHNESS; MOLECULAR RESISTS;

CHEMICAL REACTIONS; ELECTRON BEAM LITHOGRAPHY; EPOXY RESINS; EXTREME ULTRAVIOLET LITHOGRAPHY; FUNCTIONAL POLYMERS; LASER PULSES; MONOMERS; PHOTORESISTORS; PHOTORESISTS; POLYMERS; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES;

CATIONIC POLYMERIZATION;

EID: 67349131966     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.097     Document Type: Article

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