Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit in.2 storage

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Hosaka, Sumio ^a   Sano, Hirotaka ^a   Shirai, Masumi ^a   Sone, Hayato ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRON BEAM LITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM DOTS;

CALIXARENE; ELECTRON-BEAM DRAWING; ULTRAHIGH-PACKED BIT ARRAYS;

SEMICONDUCTING SILICON;

EID: 33751574077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2400102     Document Type: Article

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