Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3037-3039

  Chen, Kuei Ming ^a   Huang, Hsin Hsiung ^a   Kuo, Yi Lin ^a   Wu, Pei Lun ^a   Chu, Ting Li ^a   Yu, Hung Wei ^a   Lee, Wei I ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Free standing GaN; A3. HVPE; B1. Nitrides; B2. GaN

Indexed keywords

A1. FREE-STANDING GAN; A3. HVPE; B1. NITRIDES; B2. GAN; GAN FILM; GAN LAYERS; HIGH DENSITY; HIGH-RESOLUTION X-RAY DIFFRACTION; HYDRIDE VAPOR PHASE EPITAXY; LASER LIFT-OFF; XRD; XRD PEAKS;

BENDING (FORMING); CRYSTAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 65749091838     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.073     Document Type: Article

References (20)

1. Miskys C.R., Kelly M.K., Ambacher O., and Stutzmann M. Phys. Status Solidi (a) 176 (1999) 443
2. Miskys C.R., Kelly M.K., Ambacher O., Martínez-Criado G., and Stutzmann M. Appl. Phys. Lett. 77 (2000) 1858
3. Yasan A., McClintock R., Mayes K., Darvish S.R., Zhang H., Kung P., Razeghi M., Lee S.K., and Han J.Y. Appl. Phys. Lett. 81 (2002) 2151
4. Nishida T., and Kobayashi N. Phys. Status Solidi (a) 188 (2001) 113
5. Richter E., Hennig Ch., Weyers M., Habel F., Tsay J.-D., Liu W.-Y., Bruckner P., Scholz F., Makarov Yu., Segal A., and Kaeppeler J. J. Cryst. Growth 277 (2005) 6
6. Zhang J.X., Qu Y., Chen Y.Z., Uddin A., and Yuan S. J. Cryst. Growth 282 (2005) 137
7. Mynbaev M., Sitnikov A., Tregubov A., and Mynbaev K. J. Cryst. Growth 303 (2007) 472
8. Motoki K., Okahisa T., Matsumoto N., Matsushima M., Kimura H., Kasai H., Takemoto K., Uematsu K., Hirano T., Nakayama M., Nakahata Shu., Ueno M., Hara D., Kumagai Y., Koukitu A., and Seki H. Jpn. J. Appl. Phys. 40 (2001) L140
9. Wang L., Richter E., and Weyers M. Phys. Status Solidi (a) 204 (2007) 846
10. Andre Y., Trassoudaine A., Tourret J., Cadoret R., Gil E., Castelluci D., Aoude O., and Disseix P. J. Cryst. Growth 306 (2007) 86
11. Paskova T., Darakchieva V., Paskov P.P., odervall U.S., and Monemar B. J. Cryst. Growth 246 (2002) 207
12. Yoshida T., Oshima Y., Eri T., Ikeda K., Yamamoto S., Watanabe K., Shibata M., and Mishima T. J. Cryst. Growth 310 (2008) 5
13. Hennig Ch., Richter E., Weyers M., and Trankle G. J. Cryst. Growth 310 (2008) 911
14. Bougriouaa Z., Gibarta P., Calleja E., Jahn U., Trampert A., Ristic J., Utrera M., and Nataf G. J. Cryst. Growth 309 (2007) 113
15. Kim S.T., Lee Y.J., Moon D.C., Hong C.H., and Yoo T.K. J. Cryst. Growth 194 (1998) 37
16. Park S.S., Park I.W., and Choh S.H. Jpn. J. Appl. Phys. 39 (2000) L1141
17. Gogova D., Hemmingsson C., Monemar B., Talik E., Kruczek M., Tuomisto F., and Saarinen K. J. Phys. D: Appl. Phys. 38 (2005) 2332
18. Grandusky J.R., Jindal V., Tripathi N., Shahedipour-Sandvik F., Lu H., Kaminsky E.B., and Melkote R. J. Cryst. Growth 307 (2007) 309
19. Monemar B., Larsson H., Hemmingson C., Ivanov I.G., and Gogova D. J. Crystal. Growth 281 (2005) 17
20. Gogova D., Kasic A., Larsson H., Hemmingsson C., Monemar B., Tuomisto F., Saarinen K., Dobos L., Pe′cz B., Gibart P., and Beaumont B. J. Appl. Phys. 96 (2004) 799