Red luminescence from freestanding GaN grown on LiAlO 2 substrate by hydride vapor phase epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 3, 2007, Pages 846-849

  Wang, Lijun ^a   Richter, E ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IMPURITIES; DONOR-ACCEPTOR PAIR (DAP) TRANSITION; EXCITATION-INTENSITY; OXYGEN IMPURITIES;

GALLIUM NITRIDE; HYDRIDES; ION IMPLANTATION; LUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; VAPOR PHASE EPITAXY;

LITHIUM COMPOUNDS;

EID: 34547201621     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622409     Document Type: Article

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