Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2151-2153

  Yasan, A ^a   McClintock, R ^a   Mayes, K ^a   Darvish, S R ^a   Zhang, H ^a   Kung, P ^a   Razeghi, M ^a   Lee, S K ^b   Han, J Y ^b  

^a Northwestern University   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; DIFFERENTIAL RESISTANCES; EPITAXIALLY GROWN; GAN SUBSTRATE; INJECTION CURRENTS; MULTIQUANTUM WELLS; OUTPUT POWER; PEAK EMISSIONS; ULTRAVIOLET LIGHT-EMITTING DIODES; VAPOR PHASE;

GALLIUM NITRIDE; LIGHT EMISSION; SAPPHIRE; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 79956014965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508414     Document Type: Article

References (9)

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7. M. Razeghi, US Patent No. 5,831,277 (19 March 1997).
8. M. Razeghi, 7th Wide Bandgap III-Nitride Workshop, Richmond, VA, 10-12 March 2002.
9. The substrate was provided by Samsung, Korea through Dr. Y. S. Park of ONR.