Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 309-314

  Grandusky, J R ^a   Jindal, V ^a   Tripathi, N ^a   Shahedipour Sandvik, F ^a   Lu, H ^b   Kaminsky, E B ^b   Melkote, R ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CHARACTERIZATION; EPILAYERS; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SUBSTRATES;

BAND EDGE PEAK; LIFETIME REDUCTION; OPTICAL CHARACTERISTICS; SUBSURFACE DAMAGE;

GALLIUM NITRIDE;

EID: 34548414139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.033     Document Type: Article

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