HVPE GaN growth on porous SiC with closed surface porosity

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 472-479

  Mynbaeva, M ^a   Sitnikova, A ^a   Tregubova, A ^a   Mynbaev, K ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Defects; A3. Hydride vapor phase epitaxy; A3. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; GALLIUM NITRIDE; HETEROJUNCTIONS; POROSITY; SILICON CARBIDE; STRAIN RELAXATION; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); MISMATCH STRAINS; THREADING DISLOCATIONS;

FILM GROWTH;

EID: 34247232723     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.041     Document Type: Article

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