Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5543-5547

  Bethge, Ole ^a   Abermann, Stephan ^a   Henkel, Christoph ^a   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Aluminum oxide; Atomic layer deposition; Electrical properties and measurements; High dielectric constant; Transmission eletron microscopy; Zirconium oxide

Indexed keywords

ALUMINIUM OXIDE; ALUMINUM OXIDE; AMORPHOUS DIELECTRICS; CAPACITANCE VOLTAGE CHARACTERISTIC; DIELECTRIC STACK; ELECTRICAL PROPERTIES AND MEASUREMENTS; ELECTRICAL QUALIFICATION; HIGH DIELECTRIC CONSTANT; HIGH PERMITTIVITY; HIGH-K DIELECTRIC; LAYER STRUCTURES; LOW TEMPERATURES; LOW-LEAKAGE CURRENT; METAL OXIDE SEMICONDUCTOR; POST DEPOSITION ANNEALING; TETRAKIS; TRIMETHYLALUMINUM/WATER; ZIRCONIUM OXIDE;

ALUMINA; ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CERAMIC CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MOS DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; ZIRCONIUM;

ZIRCONIA;

EID: 65649154701     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.190     Document Type: Article

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