Electrical and structural properties of nanolaminate (Al2O 3/ZrO2/Al2O3) for metal oxide semiconductor gate dielectric applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2390-2393

  Jeon, Sanghun ^a   Yang, Hyundoek ^a   Park, Dae Gyu ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Al2O3; ALCVD; High K; Nanolaminate; ZrO2

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS;

ATOMIC-LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); NANOLAMINATES;

MOSFET DEVICES;

EID: 1142272599     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2390     Document Type: Article

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