Effects of Al addition on the native defects in hafnia

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Li, Quan ^a   Koo, K M ^a   Lau, W M ^a   Lee, P F ^b   Dai, J Y ^b   Hou, Z F ^c   Gong, X G ^c  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; OXYGEN; PASSIVATION;

AL ADDITION; BAND GAP; OXYGEN-INTERSTITIAL-RELATED; VALENCE-BAND;

HAFNIUM;

EID: 33646503749     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2196470     Document Type: Article

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