Large temperature dependence of Coulomb blockade oscillations in room-temperature-operating silicon single-hole transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 8 A, 2006, Pages 6157-6161

  Kobayashi, Masaharu ^a   Saitoh, Masumi ^a,b   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

MOSFET; Multiple silicon dots; Quantum dot; SET; SHT; Silicon single electron transistor; Silicon single hole transistor; Substrate bias effect; Thermally activated current

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSITIONS; MOSFET DEVICES; NUMERICAL ANALYSIS; OSCILLATIONS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

COULOMB BLOCKADE (CB); MULTIPLE SILICON DOTS; SINGLE HOLE TRANSISTOR (SHT); SUBSTRATE BIAS EFFECT;

TRANSISTORS;

EID: 33748552725     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6157     Document Type: Article

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