Microstructural and optical properties modifications induced by plasma and annealing treatments of lanthanum oxide sol-gel thin films

Journal of Physical Chemistry C

Volumn 113, Issue 7, 2009, Pages 2911-2918

  Armelao, L ^a   Pascolini, M ^a   Bottaro, G ^b   Bruno, G ^b   Giangregorio, M ^b   Losurdo, M ^b   Malandrino, G ^c   Nigro, R Lo ^d   Fragala, M E ^c   Tondello, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BARI   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TREATMENTS; AS-DEPOSITED FILMS; ATOMIC-FORCE MICROSCOPIES; DEPOSITED LAYERS; FILM MICROSTRUCTURES; FORMING GAS; GLANCING INCIDENCE X-RAY DIFFRACTIONS; HIGHER TEMPERATURES; INTERFACIAL REACTIONS; LANTHANUM OXIDES; LANTHANUM SILICATES; LOW TEMPERATURES; MICRO-STRUCTURAL; OPTICAL TRANSPARENCIES; PLASMA PROCESSING; POST-DEPOSITION TREATMENTS; SI (100) SUBSTRATES; SI SUBSTRATES; SOL-GEL THIN FILMS; TEM; THERMAL-ANNEALING; VISIBLE RANGES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMORPHOUS FILMS; ANNEALING; ATOMIC SPECTROSCOPY; ELECTRODEPOSITION; FORMING; GELATION; GELS; LANTHANUM; LANTHANUM ALLOYS; MICROSTRUCTURE; OPTICAL PROPERTIES; OXIDE FILMS; PLASMA DEVICES; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SOL-GEL PROCESS; SOL-GELS; SOLS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL FILMS;

EID: 65249157381     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp809824e     Document Type: Article

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