Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 6173-6180

  Niu, D ^a   Ashcraft, R W ^a   Kelly, M J ^a   Chambers, J J ^b   Klein, T M ^c   Parsons, G N ^a  

^a North Carolina State University   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c University of Alabama   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BOND FORMATION; ELEMENTARY REACTION; HIGH-K GATE DIELECTRICS; INTERFACE LAYER; INTERFACE REACTIONS; OXIDE LAYER; POST DEPOSITION TREATMENT; SILICON DIFFUSION; THERMALLY ACTIVATED; TRANSITION-METAL OXIDES; ULTRA-THIN; YTTRIUM SILICATES;

ALUMINUM COATINGS; CHEMICAL BONDS; DIFFUSION IN SOLIDS; OXIDATION; SILICA; SILICATES; SILICIDES; VAPORS; YTTRIUM;

CHEMICAL VAPOR DEPOSITION;

EID: 0036573124     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468253     Document Type: Article

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