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Volumn 21, Issue 7, 2006, Pages 1632-1637

Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; SAPPHIRE; SILICON; THIN FILMS;

EID: 33747513206     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0221     Document Type: Article
Times cited : (14)

References (12)
  • 2
    • 9644257257 scopus 로고    scopus 로고
    • Transport phenomena in high performance nanocrystalline ZnO: Ga films deposited by plasma enhanced chemical vapor deposition
    • J.J. Robbins, J. Harvey, J. Leaf, C. Fry, and C.A. Wolden: Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma enhanced chemical vapor deposition. Thin Solid Films 473, 35 (2005).
    • (2005) Thin Solid Films , vol.473 , pp. 35
    • Robbins, J.J.1    Harvey, J.2    Leaf, J.3    Fry, C.4    Wolden, C.A.5
  • 3
    • 84953846725 scopus 로고
    • 57th ed; edited by R.C. Weast (CRC Press, Cleveland, OH)
    • CRC Handbook of Chemistry and Physics, 57th ed; edited by R.C. Weast (CRC Press, Cleveland, OH, 1976-1977), p. F-224.
    • (1976) CRC Handbook of Chemistry and Physics
  • 4
    • 31044445258 scopus 로고    scopus 로고
    • A novel diamine adduct of zinc bis(2-thenoyl-trifluoroacetonate) as a promising precursor for MOCVD of zinc oxide films
    • G. Malandrino, M. Blandino, L.M.S. Perdicaro, I.L. Fragalà, P. Rossi, and P. Dapporto: A novel diamine adduct of zinc bis(2-thenoyl-trifluoroacetonate) as a promising precursor for MOCVD of zinc oxide films. Inorg. Chem. 44, 9684 (2005).
    • (2005) Inorg. Chem. , vol.44 , pp. 9684
    • Malandrino, G.1    Blandino, M.2    Perdicaro, L.M.S.3    Fragalà, I.L.4    Rossi, P.5    Dapporto, P.6
  • 6
    • 17044435508 scopus 로고    scopus 로고
    • ZnO epitaxial layers grown on c-sapphire substrate via MgO buffer by plasma assisted molecular beam epitaxy
    • M.W. Cho, A. Setiawan, H.J. Ko, S.K. Hong, and T. Yao: ZnO epitaxial layers grown on c-sapphire substrate via MgO buffer by plasma assisted molecular beam epitaxy. Semicond. Sci. Technol. 20, S13 (2005).
    • (2005) Semicond. Sci. Technol. , vol.20
    • Cho, M.W.1    Setiawan, A.2    Ko, H.J.3    Hong, S.K.4    Yao, T.5
  • 7
  • 11
    • 0001466566 scopus 로고    scopus 로고
    • Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
    • O.H. Nam, M.D. Bremser, T.S. Zheleva, and R.F. Davis: Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71, 2638 (1997).
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2638
    • Nam, O.H.1    Bremser, M.D.2    Zheleva, T.S.3    Davis, R.F.4
  • 12
    • 0002139241 scopus 로고    scopus 로고
    • Growth mechanism of microcrystalline silicon obtained from reactive plasmas
    • A. Matsuda: Growth mechanism of microcrystalline silicon obtained from reactive plasmas. Thin Solid Films 337, 1 (1999).
    • (1999) Thin Solid Films , vol.337 , pp. 1
    • Matsuda, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.