Compact modeling of drain current in independently driven double-gate MOSFETs

2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings

Volumn 3, Issue , 2007, Pages 574-577

  Munteanu, D ^a   Autran, J L ^a,b   Loussier, X ^a   Tintori, O ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

Drain current; Independently driven double gate MOSFET; Quantum effects; Short channel effects

Indexed keywords

CIRCUIT SIMULATION; DRAIN CURRENT; GATES (TRANSISTOR); QUANTUM CONFINEMENT; SEMICONDUCTOR DEVICE MODELS;

INDEPENDENTLY DRIVEN DOUBLE-GATE MOSFET DEVICES; NUMERICAL CODE; QUANTUM EFFECTS; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 34547968730     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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